A Ka-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications

This paper presents a Ka-band three-stage power amplifier for 5G communications, which has been implemented in 150 nm GaN-on-SiC technology and adopts Doherty architecture. The is made up of 50 Ω input buffer, drives splitter, thanks to it delivers its output the two units topology, namely main auxiliary amplifier. Finally, outputs amplifiers are properly arranged current combining scheme that enables typical load modulation architecture, alongside allowing at final output. proposed achieves small signal gain around 30 dB 27 GHz, while providing saturated 32 dBm, with power-added efficiency (PAE) as high 26% 18% peak 6 back-off, respectively.